Ferroelectric Capped Magnetization in Multiferroic PZT/LSMO Tunnel Junctions

摘要

Self-poled ultra-thin ferroelectric PbZr0.52Ti0.48O3 (PZT) (5 and 7 nm) filmshave been grown by pulsed laser deposition technique on ferromagneticLa0.67Sr0.33MnO3 (LSMO) (30 nm) to check the effect of polar capping onmagnetization for ferroelectric tunnel junction (FTJ) devices. PZT/LSMOheterostructures with thick polar PZT (7 nm) capping show nearly 100%enhancement in magnetization compared with thin polar PZT (5 nm) films,probably due to excess hole transfer from the ferroelectric to theferromagnetic layers. Core-level X-ray photoelectron spectroscopy studiesrevealed the presence of larger Mn 3s exchange splitting and higher Mn3+/Mn4+ion ratio in the LMSO with 7 nm polar capping.